2002. 11. 7 1/3 semiconductor technical data kta1073t epitaxial planar pnp transistor revision no : 1 high voltage control applications. plasma display, nixie tube driver applications. cathode ray tube brightness control applications. features high voltage : v cbo =-300v, v ceo =-300v low saturation voltage : v ce(sat) =-0.5v(max.) small collector output capacitance : c ob =5.5pf(typ.) complementary to ktc3207t. maximum ratings (ta=25 ) dim millimeters a b d e tsm 2.9 0.2 1.6+0.2/-0.1 0.70 0.05 0.4 0.1 2.8+0.2/-0.3 1.9 0.2 0.95 0.16 0.05 0.00-0.10 0.25+0.25/-0.15 c f g h i j k 0.60 l 0.55 a f g g d k b e c l h j j i 2 1 3 + _ + _ + _ + _ + _ 1. emitter 2. base 3. collector characteristic symbol rating unit collector-base voltage v cbo -300 v collector-emitter voltage v ceo -300 v emitter-base voltage v ebo -5 v collector current i c -100 ma base current i b -20 ma collector power dissipation p c * 0.9 w junction temperature t j 150 storage temperature range t stg -55 150 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-300v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a collector-base breakdown voltage v (br)cbo i c =-0.1ma, i e =0 -300 - - v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -300 - - v dc current gain h fe (1) v ce =-10v, i c =-1ma 30 - - h fe (2) (note) v ce =-10v, i c =-20ma 50 - 200 collector-emitter saturation voltage v ce(sat) i c =-20ma, i b =-2ma - - -0.5 v base-emitter saturation voltage v be(sat) i c =-20ma, i b =-2ma - - -1.2 v transition frequency f t v ce =-10v, i c =-20ma 50 55 - mhz collector output capacitance c ob v cb =-20v, i e =0, f=1mhz - 5.5 6.0 pf note : h fe (1) classification o:50 150, y:100~200 h rank type name marking lot no. s x fe * package mounted on a ceramic board (600 0.8 )
2002. 11. 7 2/3 kta1073t revision no : 1 c collector current i (ma) collector-emitter voltage v (v) 0 ce 0 -2 -4 -6 -8 -10 -20 -40 -60 -80 -100 i =0ma -0.1ma -0.2ma -0.3ma -0.4ma -0.6ma -0.8ma -1ma -2ma -3ma -5ma -10ma b c collector current i (ma) collector-emitter voltage v (v) 0 ce 0 i - v (low current region) cce i - v (low voltage region) cce -40 -80 -120 -160 -200 -2 -4 -6 -8 -10 i =0 a -10 a -20 a -30 a -40 a -50 a -60 a -70 a -80 a b v - i be(sat) c be(sat) base-emitter saturation voltage v (v) dc current gain h fe collector current i (ma) c c fe h - i 10 dc current gain h fe 500 -0.1 collector current i (ma) c c fe h - i -0.3 -1 -3 -10 -30 -100 30 50 100 300 common emitter v =-10v ce v =-10v -5v -1v ce ta =-55 c -0.1 -5 -0.1 -0.3 -1 -3 -10 -30 -100 -0.3 -0.5 -1 -3 common emitter t a =25 c ta=100 c ta=25 c ta=100 c ta=-55 c ta=-25 c collector current i (ma) c v - i ce(sat) c c collector current i (ma) -0.1 -0.03 ce(sat) voltage v (v) collector-emitter saturation -0.3 -1 -3 -10 -30 -100 -0.05 -0.1 -0.3 -0.5 -1 -3 common emitter i /i =10 c b i /i =10 c b t a=100 c -0.1 3 -0.3 -1 -3 -10 -30 -100 5 10 30 50 100 300 common emitter t a=25 c ta=-55 c
2002. 11. 7 3/3 kta1073t revision no : 1 c collector power dissipation p (w) ambient temperature ta ( c) 0 0 pc - ta 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 mounted on a ceramic board (600mm ` 0.8mm) 2
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